The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Jun. 03, 1982
Kei Kurosawa, Tokyo, JP;
Tadashi Shibata, Kanagawa, JP;
Abstract
A method for manufacturing integrated circuit devices wherein semiconductor elements are isolated by insulation material comprising the following steps of: (a) providing a mask pattern on a predetermined semiconductor element region of a semiconductor substrate; (b) introducing by first ion-implantation impurities of the same conductivity type as that of the substrate into the substrate using the mask pattern as an ion-implantation mask; (c) etching the substrate and forming a groove using the mask pattern as an etching mask in a manner that part of the impurities remain at least under the mask pattern in the side walls of the groove; (d) introducing by second ion-implantation impurities of the same conductivity type as that of the substrate through the groove into the substrate; (e) burying insulation material in the groove; and (f) forming a semiconductor element on the predetermined semiconductor element region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile