The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1990
Filed:
Jun. 07, 1989
Tadashi Shibata, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A concave portion having a V-shaped cross section is formed in a contact region of a p-type silicon substrate. The contact region is defined by a hole formed in an insulative layer formed over the substrate. An n-type diffusion layer is formed in the substrate so as to surround the concave portion. The n-type diffusion layer is connected to a drain region of a FET. A metal layer is formed on the insulative layer such that the metal layer is in electric contact with the diffusion layer through the increased surface area of the concave portion in the contact region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile