Sungryul Kim

This inventor holds 38 USPTO granted patents and 4 published patent applications and 11 EPO patents, primarily in Memory Systems. Top assignees: Qualcomm Incorporated, Yonsei University, Qualcomm Technologies, Inc.. Active years: 2014-2020.

USPTO Granted Patents = 38 (Patent Applications = 4)

% Patents Active = 65.8

EPO Patents = 11 (Patent Applications = 16)

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 303(Granted Patents)

Company Filing History:

34 out of 44,618

Qualcomm Incorporated

Qualcomm Technologies, Inc.

patents

where one patent can have more than one assignee

Years Active: 2014-2020

Loading Chart...

Areas of Expertise:

Memory Systems

MRAM

Non-Volatile Memory

Physically Unclonable Function

Error Correction

Spin-Orbit Torque

Dynamic Memory Protection

Data Scrubbing

Memory Array

Write Operation

Resistive Memory

Voltage Boosting

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10803942 - Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods (2020-10-13),

2. 10740017 - Dynamic memory protection (2020-08-11),

3. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data (2020-04-28),

4. 10460780 - Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory (2019-10-29),

5. 10381060 - High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array (2019-08-13),

6. 10319425 - Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits (2019-06-11),

7. 10311930 - One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations (2019-06-04),

8. 10290340 - Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation (2019-05-14),

9. 10263645 - Error correction and decoding (2019-04-16),

10. 10249814 - Dynamic memory protection (2019-04-02),

11. 10224087 - Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells (2019-03-05),

12. 10115444 - Data bit inversion tracking in cache memory to reduce data bits written for write operations (2018-10-30),

13. 9800271 - Error correction and decoding (2017-10-24),

14. 9753874 - Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems (2017-09-05),

15. 9672885 - MRAM word line power control scheme (2017-06-06),

Title: Sungryul Kim: Pioneering Inventor from San Diego

Introduction: Sungryul Kim is a distinguished inventor based in San Diego, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Sungryul Kim holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and innovative spirit.

Career Highlights: With over two decades of experience in research and development, Sungryul Kim has led numerous successful projects that have resulted in cutting-edge products and solutions.

Collaborations: Throughout his career, Sungryul Kim has collaborated with leading universities, research institutions, and tech companies, fostering a culture of innovation and knowledge sharing.

Conclusion: Sungryul Kim's passion for innovation and his dedication to pushing the boundaries of technology make him a true trailblazer in the world of inventors.