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For the Inventor, By the Inventor

San Diego, CA, United States of America

Sungryul Kim

USPTO Granted Patents = 38 

 

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 299(Granted Patents)


Company Filing History:

goldMedal34 out of 41,498 
 
Qualcomm Incorporated
 patents
silverMedal6 out of 1,338 
 
Yonsei University
 patents
bronzeMedal4 out of 159 
 
Qualcomm Technologies, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2014-2020

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38 patents (USPTO):Explore Patents
1. 10803942 - Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods (2020-10-13),
2. 10740017 - Dynamic memory protection (2020-08-11),
3. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data (2020-04-28),
4. 10460780 - Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory (2019-10-29),
5. 10381060 - High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array (2019-08-13),
6. 10319425 - Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits (2019-06-11),
7. 10311930 - One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations (2019-06-04),
8. 10290340 - Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation (2019-05-14),
9. 10263645 - Error correction and decoding (2019-04-16),
10. 10249814 - Dynamic memory protection (2019-04-02),
11. 10224087 - Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells (2019-03-05),
12. 10115444 - Data bit inversion tracking in cache memory to reduce data bits written for write operations (2018-10-30),
13. 9800271 - Error correction and decoding (2017-10-24),
14. 9753874 - Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems (2017-09-05),
15. 9672885 - MRAM word line power control scheme (2017-06-06),

Title: Sungryul Kim: Pioneering Inventor from San Diego

Introduction: Sungryul Kim is a distinguished inventor based in San Diego, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Sungryul Kim holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and innovative spirit.

Career Highlights: With over two decades of experience in research and development, Sungryul Kim has led numerous successful projects that have resulted in cutting-edge products and solutions.

Collaborations: Throughout his career, Sungryul Kim has collaborated with leading universities, research institutions, and tech companies, fostering a culture of innovation and knowledge sharing.

Conclusion: Sungryul Kim's passion for innovation and his dedication to pushing the boundaries of technology make him a true trailblazer in the world of inventors.

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