1. Qualcomm Incorporated (34 from 41,498 patents)

2. Yonsei University (6 from 1,338 patents)

3. Qualcomm Technologies, Inc. (4 from 159 patents)

1. 10803942 - Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

2. 10740017 - Dynamic memory protection

3. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data

4. 10460780 - Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory

5. 10381060 - High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array

6. 10319425 - Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits

7. 10311930 - One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations

8. 10290340 - Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation

9. 10263645 - Error correction and decoding

10. 10249814 - Dynamic memory protection

11. 10224087 - Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells

12. 10115444 - Data bit inversion tracking in cache memory to reduce data bits written for write operations

13. 9800271 - Error correction and decoding

14. 9753874 - Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems

15. 9672885 - MRAM word line power control scheme