The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Dec. 21, 2017
Qualcomm Technologies, Inc., San Diego, CA (US);
Yonsei University, University-industry Foundation, Seoul, KR;
Seong-Ook Jung, Seoul, KR;
Sara Choi, Seoul, KR;
Hong Keun Ahn, Seoul, KR;
Seung Hyuk Kang, San Diego, CA (US);
Sungryul Kim, San Diego, CA (US);
Qualcomm Technologies, Incorporated, San Diego, CA (US);
Yonsei University, University Industry Foundation, Seoul, KR;
Abstract
Sensing voltage based on a supplied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations. Sensing voltage based on supply voltage applied to an MRAM bit cell in a write operation can be used to detect completion of magnetic tunnel junction (MTJ) switching in an MRAM bit cell to terminate the write operation to reduce power and write times. In exemplary aspects provided herein, reference and write operation voltages sensed from the MRAM bit cell in response to the write operation are compared to each other to detect completion of MTJ switching of voltage based on the supply voltage applied to the MRAM bit cell regardless of whether the write operation is logic '0' or logic '1' write operation. This provides a higher sensing margin, because the change in MTJ resistance after MTJ switching completion is larger at the supply voltage rail.