The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Sep. 04, 2012
Sungryul Kim, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Matthew M. Nowak, San Diego, CA (US);
Manoj Bhatnagar, San Carlos, CA (US);
Sungryul Kim, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Matthew M. Nowak, San Diego, CA (US);
Manoj Bhatnagar, San Carlos, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.