For the Inventor, By the Inventor

Enter inventor name

San Diego, CA, United States of America

Taehyun Kim

USPTO Granted Patents = 43 (Patent Applications = 6)

EPO Patents = 15 (Patent Applications = 20)

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 263(Granted Patents)

Location History:

San Diego, CA (US) (2013 - 2018)
Cupertino, CA (US) (2016 - 2019)

Company Filing History:

43 out of 41,572

Qualcomm Incorporated

Yonsei University

where one patent can have more than one assignee

Years Active: 2013-2019

Loading Chart...

Loading Chart...

Areas of Expertise:

Error Correction

Magnetic Tunnel Junction

Non-Volatile Memory

Resistive Memory

Magnetoresistive RAM

Electrostatic Discharge Diodes

Memory Data Scrubbing

Memory Cell Array

Write Driver Circuits

Bit Recovery System

Reference Cell Repair

Multi-Level Memory Cell

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10263645 - Error correction and decoding (2019-04-16),

2. 9966149 - OTP cell with reversed MTJ connection (2018-05-08),

3. 9800271 - Error correction and decoding (2017-10-24),

4. 9753874 - Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems (2017-09-05),

5. 9679663 - OTP cell with reversed MTJ connection (2017-06-13),

6. 9672885 - MRAM word line power control scheme (2017-06-06),

7. 9666274 - System and method for MRAM having controlled averagable and isolatable voltage reference (2017-05-30),

8. 9612908 - Performing memory data scrubbing operations in processor-based memory in response to periodic memory controller wake-up periods (2017-04-04),

9. 9583171 - Write driver circuits for resistive random access memory (RAM) arrays (2017-02-28),

10. 9583170 - Adjusting resistive memory write driver strength based on a mimic resistive memory write operation (2017-02-28),

11. 9552244 - Real time correction of bit failure in resistive memory (2017-01-24),

12. 9472257 - Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing (2016-10-18),

13. 9455031 - System and method for MRAM having controlled averagable and isolatable voltage reference (2016-09-27),

14. 9455014 - Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems (2016-09-27),

15. 9455013 - System and method to trim reference levels in a resistive memory (2016-09-27),

Title: Inventor Taehyun Kim: Revolutionizing Technology in San Diego

Introduction: Taehyun Kim is a visionary inventor based in San Diego, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Taehyun Kim holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Taehyun Kim has led numerous successful projects that have had a significant impact on various industries.

Collaborations: Throughout his career, Taehyun Kim has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and create real-world solutions to complex problems.

Conclusion: Taehyun Kim's relentless pursuit of innovation and his commitment to making a positive difference in the world make him a truly inspiring figure in the field of technology and beyond.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…