The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
May. 15, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Xiangyu Dong, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/00 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/005 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 7/065 (2013.01); G11C 7/067 (2013.01);
Abstract
A hybrid cache architecture uses magnetoresistive random-access memory (MRAM) caches but has two different types of bit cell sensing. One type of bit cell sensing is single-ended and the other type of bit cell sensing is differential. The result is a uniform bit cell array but a non-uniform sense amplifier configuration.