The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Jan. 11, 2016
Qualcomm Incorporated, San Diego, CA (US);
Taehyun Kim, Cupertino, CA (US);
Jung Pill Kim, San Diego, CA (US);
Sungryul Kim, San Diego, CA (US);
Qualcomm Incorporated, San Diego, CA (US);
Abstract
A method includes, at a resistive memory device, determining an average effective reference resistance level based on a first effective reference resistance and a second effective reference resistance. The first effective reference resistance is based on a first set of reference cells of the resistive memory device and the second effective reference resistance is based on a second set of reference cells of the resistive memory device. The method includes trimming a reference resistance at least partially based on the average effective reference resistance level. Trimming the reference resistance includes, in response to determining that the first effective reference resistance is not substantially equal to the average effective reference resistance level, modifying one or more states of one or more magnetic tunnel junction devices associated with the first effective reference resistance.