The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Mar. 29, 2018
Qualcomm Incorporated, San Diego, CA (US);
Yonsei University, University-industry Foundation, Seoul, KR;
Seong-Ook Jung, Seoul, KR;
Byungkyu Song, Seoul, KR;
Sungryul Kim, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
QUALCOMM Technologies Incorporated, San Diego, CA (US);
Yonsei University, University-Industry Foundation, Seoul, KR;
Abstract
Offset-cancellation sensing circuit (OCSC)-based Non-volatile (NV) memory circuits are disclosed. An OCSC-based NV memory circuit includes a latch circuit configured to latch a memory state from an input signal. The OCSC-based NV memory circuit also includes a sensing circuit that includes NV memory devices configured to store the latched memory state in the latch circuit for restoring the memory state in the latch circuit when recovering from a reduced power level in an idle mode. To avoid the need to increase transistor size in the sensing circuit to mitigate restoration degradation, the sensing circuit is also configured to cancel an offset voltage of a differential amplifier in the sensing circuit. In other exemplary aspects, the NV memory devices are included in the sensing circuit and coupled to the differential transistors as NMOS transistors in the differential amplifier, eliminating contribution of offset voltage from other differential PMOS transistors not included.