The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Mar. 29, 2018
Qualcomm Incorporated, San Diego, CA (US);
Yonsei University, University-industry Foundation, Seoul, KR;
Seong-Ook Jung, Seoul, KR;
Sara Choi, Seoul, KR;
Hong Keun Ahn, Seoul, KR;
Seung Hyuk Kang, San Diego, CA (US);
Sungryul Kim, San Diego, CA (US);
QUALCOMM Technologies, Incorporated, San Diego, CA (US);
Yonsei University, University-Industry Foundation, Seoul, KR;
Abstract
Aspects disclosed in the detailed description include offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation. The OC write operation sensing circuit is configured to sense when MTJ switching occurs in MRAM bit cell. In an example, the OC write operation sensing circuit includes a voltage sensing circuit and a sense amplifier. The voltage sensing circuit employs a capacitive-coupling effect so that the output voltage drops in response to MTJ switching for both logic '0' and logic '1' write operations. The sense amplifier has a single input and a single output node with an output voltage indicating when MTJ switching has occurred in the MRAM bit cell. A single input transistor and pull-up transistor are provided in the sense amplifier in one example to provide an offset-canceling effect.