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For the Inventor, By the Inventor

Boise, ID, United States of America

Stefan Uhlenbrock

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 2.2

ph-index = 17

Forward Citations = 1,635(Granted Patents)


Inventors with similar research interests:


Company Filing History:

goldMedal59 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 59 
 
Micro Technology, Inc.
 patents

Years Active: 1999-2023

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60 patents (USPTO):Explore Patents
1. 11651955 - Methods of forming silicon nitride including plasma exposure (2023-05-16),
2. 11538991 - Methods of forming a memory cell comprising a metal chalcogenide material (2022-12-27),
3. 11152205 - Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursors (2021-10-19),
4. 10964532 - Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features (2021-03-30),
5. 10651375 - Memory cells, semiconductor devices including the memory cells, and methods of operation (2020-05-12),
6. 10374156 - Memory cells including a metal chalcogenide material and related methods (2019-08-06),
7. 10319586 - Methods comprising an atomic layer deposition sequence (2019-06-11),
8. 10283705 - Memory cells, semiconductor devices including the memory cells, and methods of operation (2019-05-07),
9. 9935264 - Memory cells and methods of fabrication (2018-04-03),
10. 9929006 - Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures (2018-03-27),
11. 9865456 - Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures (2018-01-09),
12. 9496491 - Methods of forming a metal chalcogenide material and related methods of forming a memory cell (2016-11-15),
13. 9269900 - Methods of depositing phase change materials and methods of forming memory (2016-02-23),
14. 9234273 - Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same (2016-01-12),
15. 9029856 - Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures (2015-05-12),

Title: Innovations of Stefan Uhlenbrock in Semiconductor Technology

Introduction

Stefan Uhlenbrock is a prominent inventor based in Boise, ID, with an impressive portfolio of 60 patents to his name. His work primarily focuses on semiconductor technologies, where he has contributed significantly to the development of methods and materials that enhance semiconductor performance.

Latest Patents

Among his latest patents, Uhlenbrock has developed methods of forming silicon nitride, a key material in semiconductor manufacturing. The process involves atomic layer deposition at temperatures of 275°C or lower, followed by plasma exposure. This sophisticated technique allows for the creation of silicon nitride layers with enhanced properties. Additionally, he has patented methods for forming memory cells that utilize a metal chalcogenide material. This involves the reaction of metal and chalcogenide precursors in a controlled environment to deposit the material on a substrate, paving the way for advanced memory cell technologies.

Career Highlights

Stefan Uhlenbrock’s career includes significant positions at Micron Technology Incorporated and Micro Technology, Inc. His expertise and innovations have driven advancements in semiconductor manufacturing processes, making a notable impact in the industry.

Collaborations

Throughout his career, Uhlenbrock has collaborated with talented professionals, including Eugene P. Marsh and Brian A. Vaartstra. Together, they have shared insights and expertise that have further propelled their contributions to semiconductor technology.

Conclusion

Stefan Uhlenbrock stands out as an influential figure in the realm of semiconductor innovations. His extensive patent portfolio and collaborations echo his dedication to advancing technology, making significant strides in the field of electronics. As he continues to innovate, his work is likely to shape the future of semiconductor applications.

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