The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Jul. 20, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Timothy A. Quick, Boise, ID (US);

Sumeet C. Pandey, Boise, ID (US);

Stefan Uhlenbrock, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C01B 21/068 (2006.01); C09D 7/12 (2006.01); C07F 7/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02208 (2013.01); C01B 21/068 (2013.01); C07F 7/025 (2013.01); C09D 7/1233 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/76831 (2013.01);
Abstract

A silicon chalcogenate precursor comprising the chemical formula of Si(XR)R, where X is sulfur, selenium, or tellurium, Ris hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each Ris independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.


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