Micron Technology Incorporated

Micro Technology, Inc.

Stefan Uhlenbrock

Eugene P Marsh

Brian A Vaartstra

Timothy A Quick

Sumeet C Pandey

Scott E Sills

John A Smythe

Donald L Westmoreland

Chet E Carter

Dan B Millward

Brenda D Kraus

Garo Jacques Derderian

Woohee Kim

Don Westmoreland

Daniel Millward

Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275&#xb0; C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

Methods of forming silicon nitride including plasma exposure

A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

Methods of forming a memory cell comprising a metal chalcogenide material

A silicon chalcogenate precursor comprising the chemical formula of Si(XR)R, where X is sulfur, selenium, or tellurium, Ris hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each Ris independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursors

Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features

Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

Memory cells, semiconductor devices including the memory cells, and methods of operation

Memory cells including a metal chalcogenide material and related methods

An example method comprises an ALD sequence including contacting an outer substrate surface at a temperature Twith a first precursor to form a monolayer onto the outer substrate surface. Temperature of the outer substrate surface and the monolayer thereon is increased to a temperature Tthat is at least 200&#xb0; C. greater than a maximum of the temperature T. The temperature-increasing is at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the monolayer thereon at least 200&#xb0; C. above the maximum temperature T. At the temperature T, the monolayer is contacted with a second precursor that reacts with the monolayer to form a reaction product and a new outer substrate surface that each comprise a component from the monolayer and a component from the second precursor. With the monolayer not having been allowed to be at least 200&#xb0; C. above the maximum temperature Tfor more than 10 seconds, temperature of the new outer substrate surface is decreased from the temperature Tto a lower temperature TL that is at least 200&#xb0; C. lower than a minimum of the temperature T

Methods comprising an atomic layer deposition sequence

Memory cells and methods of fabrication

Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures

Methods of forming a metal chalcogenide material and related methods of forming a memory cell

A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Methods of depositing phase change materials and methods of forming memory

The present invention provides metal-containing compounds that include at least one &#x3b2;-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical &#x3b2;-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one &#x3b2;-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for &#x3b2;-diketiminate ligands are also provided.

Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures

Growing community of inventors

Boise, ID, United States of America

Stefan Uhlenbrock