The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Jan. 02, 2018
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An example method comprises an ALD sequence including contacting an outer substrate surface at a temperature Twith a first precursor to form a monolayer onto the outer substrate surface. Temperature of the outer substrate surface and the monolayer thereon is increased to a temperature Tthat is at least 200° C. greater than a maximum of the temperature T. The temperature-increasing is at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the monolayer thereon at least 200° C. above the maximum temperature T. At the temperature T, the monolayer is contacted with a second precursor that reacts with the monolayer to form a reaction product and a new outer substrate surface that each comprise a component from the monolayer and a component from the second precursor. With the monolayer not having been allowed to be at least 200° C. above the maximum temperature Tfor more than 10 seconds, temperature of the new outer substrate surface is decreased from the temperature Tto a lower temperature TL that is at least 200° C. lower than a minimum of the temperature T