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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Soon-Moon Jung

USPTO Granted Patents = 60 

Average Co-Inventor Count = 4.4

ph-index = 13

Forward Citations = 646(Granted Patents)

Forward Citations (Not Self Cited) = 625(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kyunggi-do, KR (2005)
  • Sungnam-si, KR (2010)
  • Seoul, KR (2010 - 2011)
  • Gyeonggi-do, KR (2006 - 2012)
  • Seongnam, KR (2011 - 2012)
  • Yongin-si, KR (2004 - 2013)
  • Seongnam-si, KR (2008 - 2013)

Company Filing History:

goldMedal59 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 832,843 
Other
 patents

Years Active: 2004-2013

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Areas of Expertise:
Semiconductor Devices
Non-Volatile Memory
3D Memory Devices
NAND Flash Memory
SRAM Devices
Multi-Layer Memory
Transistor Fabrication
Memory Systems
Stacked Transistors
Thin Film Transistors
Integrated Circuit Devices
Phase Change Memory
60 patents (USPTO):Explore Patents
1. 8399308 - Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines (2013-03-19),
2. 8343812 - Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same (2013-01-01),
3. 8324045 - Method of forming semiconductor device having common node that contacts plural stacked active elements and that has resistive memory elements corresponding to the active elements (2012-12-04),
4. 8258563 - Multi-layer memory devices (2012-09-04),
5. 8258517 - Semiconductor device having driving transistors (2012-09-04),
6. 8227919 - Interconnection structure and electronic device employing the same (2012-07-24),
7. 8227306 - Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof (2012-07-24),
8. 8183634 - Stack-type semiconductor device (2012-05-22),
9. 8168530 - Methods of forming one transistor DRAM devices (2012-05-01),
10. 8084306 - Methods of forming semiconductor devices having self-aligned bodies (2011-12-27),
11. 8054688 - Non-volatile memory device and erase method (2011-11-08),
12. 8048727 - Methods of forming SRAM devices having buried layer patterns (2011-11-01),
13. 8040733 - Non-volatile memory device and method of operating the same (2011-10-18),
14. 8034668 - Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines (2011-10-11),
15. 8026504 - Semiconductor device and method of forming the same (2011-09-27),

Title: Inventor Soon-Moon Jung: Revolutionizing Technology in Gyeonggi-do, KR

Introduction: Soon-Moon Jung is a visionary inventor based in Gyeonggi-do, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Soon-Moon Jung holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative approach to solving complex problems.

Career Highlights: With a career spanning over two decades, Soon-Moon Jung has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Soon-Moon Jung has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Soon-Moon Jung's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a prominent figure in the world of inventors, with his work continuing to inspire future generations of innovators.

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