The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

Sep. 19, 2011
Applicants:

Young-chul Jang, Yongin-si, KR;

Won-seok Cho, Suwon-si, KR;

Jae-hoon Jang, Seongnam-si, KR;

Soon-moon Jung, Yongin-si, KR;

Yang-soo Son, Yongin-si, KR;

Min-sung Song, Seoul, KR;

Inventors:

Young-Chul Jang, Yongin-si, KR;

Won-Seok Cho, Suwon-si, KR;

Jae-Hoon Jang, Seongnam-si, KR;

Soon-Moon Jung, Yongin-si, KR;

Yang-Soo Son, Yongin-si, KR;

Min-Sung Song, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.


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