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Yongin, South Korea

Young-Chul Jang

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young-Chul Jang. Retrieved from https://idiyas.com/inventor/young-chul-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 70.6

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 164(Granted Patents)


Location History:

  • Suwon, KR (1998 - 1999)
  • Kyonggido, KR (2001)
  • Gyeonggi-do, KR (2006 - 2012)
  • Yongin-si, KR (2009 - 2013)
  • Seoul, KR (2011 - 2013)

Company Filing History:

goldMedal17 out of 138,671 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2013

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Areas of Expertise:
Semiconductor Device
Metallization
Memory Device
NAND Flash Memory
Transistor
MOS Transistor
Multi-Layer Memory
Thickness Control
Fabrication Method
Integrated Circuit
Bonded Interface
Nonvolatile Memory
17 patents (USPTO):Explore Patents
1. 8399308 - Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines (2013-03-19),
2. 8343812 - Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same (2013-01-01),
3. 8258563 - Multi-layer memory devices (2012-09-04),
4. 8034668 - Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines (2011-10-11),
5. 7960844 - 3-dimensional flash memory device, method of fabrication and method of operation (2011-06-14),
6. 7910433 - Methods of fabricating multi-layer nonvolatile memory devices (2011-03-22),
7. 7759203 - MOS transistor having protruded-shape channel and method of fabricating the same (2010-07-20),
8. 7683404 - Stacked memory and method for forming the same (2010-03-23),
9. 7602028 - NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same (2009-10-13),
10. 7601998 - Semiconductor memory device having metallization comprising select lines, bit lines and word lines (2009-10-13),
11. 7563683 - Transistor and method of fabricating the same (2009-07-21),
12. 7538386 - MOS transistor having protruded-shape channel and method of fabricating the same (2009-05-26),
13. 7170133 - Transistor and method of fabricating the same (2007-01-30),
14. 7141851 - Transistors having a recessed channel region (2006-11-28),
15. 6211094 - Thickness control method in fabrication of thin-film layers in semiconductor devices (2001-04-03),

Title: Young-Chul Jang: Pioneering Inventor from Yongin-si, South Korea

Introduction: Young-Chul Jang is a distinguished inventor hailing from Yongin-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Young-Chul Jang holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his versatility and ingenuity in various domains.

Career Highlights: With a career spanning over two decades, Young-Chul Jang has worked tirelessly to develop cutting-edge solutions that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Young-Chul Jang has collaborated with leading research institutions, universities, and tech companies to bring his innovative ideas to life, fostering a culture of creativity and progress.

Conclusion: Young-Chul Jang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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