The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7960844 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 14, 2011

Filed:

Jul. 09, 2009
Applicants:

Young-chul Jang, Seoul, KR;

Han-soo Kim, Suwon-si, KR;

Jae-hun Jeong, Hwaseong-si, KR;

Soon-moon Jung, Seongnam-si, KR;

Inventors:

Young-Chul Jang, Seoul, KR;

Han-Soo Kim, Suwon-si, KR;

Jae-Hun Jeong, Hwaseong-si, KR;

Soon-Moon Jung, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a flash memory device and method of operation. The flash memory device includes a bottom memory cell array and a top memory cell array disposed over the bottom memory cell array. The bottom memory cell array includes a bottom semiconductor layer, a bottom well, and a plurality of bottom memory cell units. The top memory cell array includes a top semiconductor layer, a top well, and a plurality of top memory cell units. A well bias line is disposed over the top memory cell array and includes a bottom well bias line and a top well bias line, The bottom well bias line is electrically connected to the bottom well, and the top well bias line is electrically connected to the top well.


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