The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Aug. 20, 2004
Applicants:
Young-chul Jang, Gyeonggi-do, KR;
Sung-bong Kim, Gyeonggi-do, KR;
Hoon Lim, Seoul, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Inventors:
Young-Chul Jang, Gyeonggi-do, KR;
Sung-Bong Kim, Gyeonggi-do, KR;
Hoon Lim, Seoul, KR;
Soon-Moon Jung, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor includes a substrate and a device isolation layer that is formed on the substrate to define an active region. A gate pattern crosses over the active region. A gate insulation layer is interposed between the gate pattern and the active region. Source and drain regions are formed in the active region adjacent to respective sides of the gate pattern. A channel region is disposed in the active region between the source and drain regions. The channel region includes a recessed portion.