The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Oct. 28, 2004
Applicants:
Young-chul Jang, Gyeonggi-do, KR;
Won-seok Cho, Gyeonggi-do, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor and a method of fabricating the same: The transistor includes an isolation layer disposed in a semiconductor substrate to define an active region. A pair of source/drain regions is disposed in the active region, spaced apart from each other. A channel region is interposed between the pair of the source/drain regions. The active region has a mesa disposed across the channel region. The mesa extends to the source/drain regions. A gate electrode is disposed to cross the active region along the direction across the mesa.