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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Won-seok Cho

USPTO Granted Patents = 14

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal13 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 832,880 
Other
 patents

Years Active: 2006-2018

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14 patents (USPTO):Explore Patents
1. 9881934 - Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device (2018-01-30),
2. 7709323 - Methods of forming nand-type nonvolatile memory devices (2010-05-04),
3. 7563683 - Transistor and method of fabricating the same (2009-07-21),
4. 7554140 - Nand-type non-volatile memory device (2009-06-30),
5. 7485535 - Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layer (2009-02-03),
6. 7432560 - Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same (2008-10-07),
7. 7405450 - Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon (2008-07-29),
8. 7387919 - Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter (2008-06-17),
9. 7312110 - Methods of fabricating semiconductor devices having thin film transistors (2007-12-25),
10. 7276404 - Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patterns (2007-10-02),
11. 7247528 - Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques (2007-07-24),
12. 7193276 - Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer (2007-03-20),
13. 7170133 - Transistor and method of fabricating the same (2007-01-30),
14. 7135746 - SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the same (2006-11-14),

Title: Innovations of Won-seok Cho in Non-Volatile Memory Devices

Introduction

Won-seok Cho is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 14 patents. His work has been instrumental in advancing memory technology, particularly in the development of vertical non-volatile memory devices.

Latest Patents

Among his latest patents, Won-seok Cho has developed a vertical non-volatile memory device that features a metal source line. This innovative device includes cell string units that are vertically arranged on a semiconductor substrate, along with impurity regions and conductive lines that enhance its functionality. Additionally, he has worked on methods for fabricating NAND-type non-volatile memory devices, which involve intricate processes such as forming common drains and sources, as well as creating semiconductor patterns that optimize performance.

Career Highlights

Throughout his career, Won-seok Cho has been associated with leading technology companies, including Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Won-seok Cho has collaborated with notable professionals in the field, including Soon-Moon Jung and Jae-hoon Jang. These collaborations have further enriched his work and led to innovative solutions in memory device technology.

Conclusion

Won-seok Cho's contributions to the field of non-volatile memory devices are noteworthy and reflect his expertise as an inventor. His patents and collaborations continue to influence advancements in memory technology, showcasing his significant role in this dynamic industry.

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