The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Feb. 12, 2004
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon
Gyu-ho Lyu, Gyeonggi-do, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Sung-bong Kim, Gyeonggi-do, KR;
Hoon Lim, Seoul, KR;
Won-seok Cho, Gyeonggi-do, KR;
Gyu-Ho Lyu, Gyeonggi-do, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Sung-bong Kim, Gyeonggi-do, KR;
Hoon Lim, Seoul, KR;
Won-Seok Cho, Gyeonggi-do, KR;
Abstract
Semiconductor devices that include a semiconductor substrate and a gate line are provided. The gate line is on the semiconductor substrate and includes a gate insulation pattern and a gate electrode which are stacked on the substrate in the order named. A spacer is on a sidewall of the gate line. A conductive line pattern is on the gate line. The conductive line pattern is parallel with the gate line and is electrically connected to the gate electrode.