The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jan. 10, 2007
Hoo-sung Cho, Gyeonggi-do, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Won-seok Cho, Gyeonggi-do, KR;
Jong-hyuk Kim, Gyeonggi-do, KR;
Jae-hun Jeong, Gyeonggi-Do, KR;
Jae-hoon Jang, Gyeonggi-Do, KR;
Hoo-Sung Cho, Gyeonggi-do, KR;
Soon-Moon Jung, Gyeonggi-do, KR;
Won-Seok Cho, Gyeonggi-do, KR;
Jong-Hyuk Kim, Gyeonggi-do, KR;
Jae-Hun Jeong, Gyeonggi-Do, KR;
Jae-Hoon Jang, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a NAND-type nonvolatile memory device and method of forming the same. In the method, a plurality of cell layers are stacked on a semiconductor substrate. Seed contact holes for forming a semiconductor pattern included in a stacked cell are formed at regular distance. At this time, the seed contact holes are arranged such that a bit line plug or a source line pattern is disposed at a center between one pair of seed contact holes adjacent to each other.