IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jae-hoon Jang

USPTO Granted Patents = 20 

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 352(Granted Patents)


Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 2006-2018

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20 patents (USPTO):
1. 9881934 - Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device (2018-01-30),
2. 8258563 - Multi-layer memory devices (2012-09-04),
3. 8183634 - Stack-type semiconductor device (2012-05-22),
4. 8168530 - Methods of forming one transistor DRAM devices (2012-05-01),
5. 8048727 - Methods of forming SRAM devices having buried layer patterns (2011-11-01),
6. 7910433 - Methods of fabricating multi-layer nonvolatile memory devices (2011-03-22),
7. 7795651 - One transistor DRAM device and method of forming the same (2010-09-14),
8. 7709323 - Methods of forming nand-type nonvolatile memory devices (2010-05-04),
9. 7671389 - SRAM devices having buried layer patterns (2010-03-02),
10. 7646664 - Semiconductor device with three-dimensional array structure (2010-01-12),
11. 7589375 - Non-volatile memory devices including etching protection layers and methods of forming the same (2009-09-15),
12. 7554140 - Nand-type non-volatile memory device (2009-06-30),
13. 7521715 - Node contact structures in semiconductor devices (2009-04-21),
14. 7511297 - Phase change memory device and method of fabricating the same (2009-03-31),
15. 7479673 - Semiconductor integrated circuits with stacked node contact structures (2009-01-20),

Title: **Jae-hoon Jang: A Pioneer in Non-Volatile Memory Technology**

Introduction

Jae-hoon Jang, based in Gyeonggi-do, South Korea, stands out as an influential inventor in the field of semiconductor technology. With a remarkable portfolio of 20 patents, he has made significant contributions to the development of innovative non-volatile memory devices.

Latest Patents

His latest patents include groundbreaking advancements such as a vertical non-volatile memory device and its fabrication method. This vertical non-volatile memory device is characterized by a metal source line and comprises cell string units arranged vertically on a semiconductor substrate. It incorporates impurity regions formed between these units, along with conductive lines and insulating spacers on the cell string units' sidewalls. Additionally, he has developed multi-layer memory devices featuring a nonvolatile memory structure that utilizes varying doping concentrations to enhance performance, thereby reducing resistance differences between various well regions.

Career Highlights

Jae-hoon Jang has carved a niche in the tech industry, having worked with Samsung Electronics Co., Ltd., a leader in semiconductor innovation. His expertise in memory device technology has been pivotal in advancing the performance and efficiency of memory storage solutions used in various electronic devices.

Collaborations

Throughout his career, Jae-hoon has collaborated with prominent industry professionals, including Soon-Moon Jung and Jong-Hyuk Kim. These partnerships have facilitated the exchange of ideas and have contributed to the successful development of innovative solutions in the field of non-volatile memory.

Conclusion

Jae-hoon Jang’s extensive patent portfolio and his commitment to advancing non-volatile memory technology illustrate his role as a key player in the semiconductor industry. As technology continues to evolve, his contributions will likely pave the way for further innovations, solidifying his status as a leading inventor in this transformative field.

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