The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Jul. 23, 2010
Jae-hun Jeong, Gyeonggi-do, KR;
Ki-nam Kim, Seoul, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Jae-hoon Jang, Gyeonggi-do, KR;
Jae-Hun Jeong, Gyeonggi-do, KR;
Ki-Nam Kim, Seoul, KR;
Soon-Moon Jung, Gyeonggi-do, KR;
Jae-Hoon Jang, Gyeonggi-do, KR;
Abstract
A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.