IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jong-Hyuk Kim

USPTO Granted Patents = 21


Average Co-Inventor Count = 6.2

ph-index = 6

Forward Citations = 344(Granted Patents)


Location History:

  • Incheon-si, KR (2007)
  • Incheon, KR (2006 - 2008)
  • Suwon-si, KR (2010)
  • Andong-si, KR (2011)
  • Osan-si, KR (2010 - 2014)
  • Hwaseong-si, KR (2019 - 2020)
  • Gyeonggi-do, KR (2007 - 2021)

Company Filing History:

goldMedal20 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 2006-2021

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21 patents (USPTO):
1. 11133571 - Electronic apparatus and control method therefor (2021-09-28),
2. 10748846 - Semiconductor device (2020-08-18),
3. 10438886 - Semiconductor device (2019-10-08),
4. 8759224 - Method of forming a pattern structure for a semiconductor device (2014-06-24),
5. 8405158 - Semiconductor devices and methods of fabricating the same (2013-03-26),
6. 8372198 - Methods of forming dual damascene structures (2013-02-12),
7. 8343812 - Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same (2013-01-01),
8. 7998834 - Substrate level bonding method and substrate level package (2011-08-16),
9. 7719033 - Semiconductor devices having thin film transistors and methods of fabricating the same (2010-05-18),
10. 7709323 - Methods of forming nand-type nonvolatile memory devices (2010-05-04),
11. 7683404 - Stacked memory and method for forming the same (2010-03-23),
12. 7589375 - Non-volatile memory devices including etching protection layers and methods of forming the same (2009-09-15),
13. 7554140 - Nand-type non-volatile memory device (2009-06-30),
14. 7417286 - Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same (2008-08-26),
15. 7387919 - Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter (2008-06-17),

Title: Innovations by Jong-Hyuk Kim: A Pioneer in Electronic Apparatus and Semiconductor Devices

Introduction: Jong-Hyuk Kim, based in Gyeonggi-do, South Korea, is a notable inventor with a remarkable portfolio consisting of 21 patents. His contributions have significantly advanced the fields of electronic apparatus and semiconductor technology.

Latest Patents: Among his recent innovations, two patents stand out for their complexity and utility. The first, titled "Electronic apparatus and control method therefor," describes an electronic apparatus with multiple antennas—specifically a first and a third antenna for the first bandwidth, and a second and fourth antenna for the second bandwidth. This design allows for enhanced transmission and reception capabilities across multiple bandwidths.

The second patent, focused on a "semiconductor device," outlines a structure that includes an insulating layer, a pad, and a circuit. This innovative design features intricate wiring systems that ensure efficient connections and functionality, showcasing Jong-Hyuk's commitment to advancing semiconductor technology.

Career Highlights: Jong-Hyuk Kim has made significant contributions during his tenure at Samsung Electronics Co., Ltd., among other organizations. His expertise in electronic systems and semiconductor devices has had a lasting impact on the industry's development.

Collaborations: Throughout his career, Jong-Hyuk has had the opportunity to collaborate with talented individuals, including Soon-Moon Jung and Jae-hoon Jang. These collaborations have facilitated a dynamic exchange of ideas, further propelling innovation in their respective fields.

Conclusion: Jong-Hyuk Kim exemplifies the spirit of innovation and invention in the electronics and semiconductor domains. With his extensive patent portfolio and collaborative efforts, he continues to inspire future advancements and set benchmarks in technology development.

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