The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 18, 2011
Jong-hyuk Kim, Osan-si, KR;
Keon-soo Kim, Hwaseong-si, KR;
Kwang-shik Shin, Hwaseong-si, KR;
Hyun-chul Back, Suwon-si, KR;
Seong-soon Cho, Suwon-si, KR;
Young-bae Yoon, Yongin-si, KR;
Jung-hwan Park, Gyeongju-si, KR;
Jong-Hyuk Kim, Osan-si, KR;
Keon-Soo Kim, Hwaseong-si, KR;
Kwang-Shik Shin, Hwaseong-si, KR;
Hyun-Chul Back, Suwon-si, KR;
Seong-Soon Cho, Suwon-si, KR;
Young-Bae Yoon, Yongin-si, KR;
Jung-Hwan Park, Gyeongju-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
In a method of forming a pattern structure, a cut-off portion of the node-separated line of a semiconductor device is formed by a double patterning process by using a connection portion of the sacrificial mask pattern and the mask pattern to thereby improve alignment margin. The alignment margin between the mask pattern and the sacrificial mask pattern is increased to an amount of the length of the connection portion of the sacrificial mask pattern. The lines adjacent to the node-separated line include a protrusion portion protruding toward the cut-off portion of the separated line.