Kyungki-do, South Korea

Keon-Soo Kim

This inventor holds 33 USPTO granted patents and 2 published patent applications, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1990-2014.

USPTO Granted Patents = 33 

% Patents Active = 97.0

Average Co-Inventor Count = 2.3

ph-index = 12

Forward Citations = 431(Granted Patents)


Location History:

  • Kimhae, KR (1990)
  • Suwon, KR (1997 - 1999)
  • Kyungki-do, KR (1994 - 2000)
  • Kyonggi-do, KR (2000 - 2001)
  • Hwaseong-di, KR (2013)
  • Gyeonggi-do, KR (2008 - 2014)
  • Hwaseong-si, KR (2012 - 2014)

Company Filing History:


Years Active: 1990-2014

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Areas of Expertise:
Nonvolatile Memory
Semiconductor Fabrication
Flash Memory
EEPROM
NAND Flash
High Voltage Transistors
Cell Array Layout
Memory Device Integration
Active Region Structure
Pattern Structure
Dual Trench
Floating Gate
33 patents (USPTO):Explore Patents

Title: **Keon-Soo Kim: Innovator in Nonvolatile Memory Technology**

Introduction

Keon-Soo Kim, a prominent inventor located in Kyungki-do, South Korea, has made significant contributions to the field of nonvolatile memory devices. With a total of 33 patents to his name, his work continues to influence advancements in memory technology.

Latest Patents

Among his latest innovations is a patent for a nonvolatile memory device and a method of manufacturing it. This invention details a device isolation pattern and an active region extending in a first direction on a substrate. A first dielectric pattern is formed on the active region, with conductive stack structures arranged on this pattern. Additionally, a recess is created between adjacent conductive stack structures. A protection layer is included to shield the sidewall of the stack structure from over-etching. This protection layer consists of an etch-proof layer made of oxide and is arranged on the sidewalls of critical components like the floating gate electrode and the control gate line.

Another notable patent from Kim is the development of a nonvolatile memory device that includes a common source. This design features a first active region crossing a second active region, with a common source located within the latter. A source conductive line runs parallel to the common source and is electrically connected, enhancing the device's overall efficiency and functionality.

Career Highlights

Keon-Soo Kim currently works at Samsung Electronics Co., Ltd., a leading technology company known for its dynamic innovations in electronics and computing. His role as an inventor has seen him at the forefront of developing cutting-edge memory solutions, reinforcing Samsung's position in the technology landscape.

Collaborations

Throughout his career, Kim has collaborated with esteemed colleagues, including Jae-Hwang Sim and Yong-Bae Choi. Together, they have pushed the boundaries of memory technology through their innovative approaches and team efforts, further advancing the field.

Conclusion

Keon-Soo Kim's remarkable contributions to the development of nonvolatile memory devices underscore his status as a leading inventor in the technology sector. With a total of 33 patents, his ongoing work at Samsung Electronics Co., Ltd. promises to deliver even more groundbreaking innovations in the years to come.

Profile summary based on public USPTO records.
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