The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Dec. 09, 2010
Yoon-moon Park, Seoul, KR;
Se-jun Park, Suwon-si, KR;
Suk-kang Sung, Seongnami-si, KR;
Keon-soo Kim, Hwaseong-si, KR;
Jung-dal Choi, Hwaseong-si, KR;
Choong-ho Lee, Yongin-si, KR;
Jin-hyun Shin, Suwon-si, KR;
Seung-wook Choi, Suwon-si, KR;
Dong-hoon Jang, Seoul, KR;
Yoon-Moon Park, Seoul, KR;
Se-Jun Park, Suwon-si, KR;
Suk-Kang Sung, Seongnami-si, KR;
Keon-Soo Kim, Hwaseong-si, KR;
Jung-Dal Choi, Hwaseong-si, KR;
Choong-Ho Lee, Yongin-si, KR;
Jin-Hyun Shin, Suwon-si, KR;
Seung-Wook Choi, Suwon-si, KR;
Dong-Hoon Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A flash memory device, including a cell array region where a plurality of memory cells are connected in series to a single cell string, the cell array region including a pocket p-well configured to accommodate the plurality of memory cells and an n-well configured to surround the pocket p-well, a first peripheral region where low-voltage (LV) and high-voltage (HV) switches are connected to the memory cells through a word line, and a second peripheral region where bulk voltage switches are connected to bulk regions of the LV and HV switches.