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For the Inventor, By the Inventor

Suwon, South Korea

Jin-hyun Shin

This inventor holds 9 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin-hyun Shin. Retrieved from https://idiyas.com/inventor/jin-hyun-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9 

% Patents Active = 55.6

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Kyounggi-do, KR (2005)
  • Suwon-si, KR (2008 - 2020)

Company Filing History:

goldMedal9 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2020

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9 patents (USPTO):Explore Patents
1. 10600805 - Vertical memory devices with common source including alternately repeated portions having different widths (2020-03-24),
2. 9379122 - Memory device and method of fabricating the same (2016-06-28),
3. 9330931 - Method of manufacturing semiconductor device (2016-05-03),
4. 8642438 - Method of manufacturing an integrated circuit device (2014-02-04),
5. 8487383 - Flash memory device having triple well structure (2013-07-16),
6. 8187935 - Method of forming active region structure (2012-05-29),
7. 7592665 - Non-volatile memory devices having floating gates (2009-09-22),
8. 7391082 - Semiconductor integrated circuit having resistor (2008-06-24),
9. 6969650 - Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways (2005-11-29),

Title: The Innovative Contributions of Jin-hyun Shin

Introduction

Jin-hyun Shin is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 9 patents. His work is primarily associated with Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology.

Latest Patents

Among his latest patents is a vertical memory device that features a common source, which includes alternately repeated portions with varying widths. This innovative design incorporates a substrate with multiple channels extending vertically, surrounded by stacked gate lines. The conductive line within this device is periodically altered in width, enhancing its functionality. Another notable patent involves a memory device that consists of an array of floating gate memory cells, which are separated by air gaps. These gaps serve to electrically decouple the active regions of adjacent memory cells, improving performance and reliability.

Career Highlights

Jin-hyun Shin's career at Samsung Electronics Co., Ltd. has been marked by his dedication to advancing memory technology. His innovative designs have not only contributed to the company's success but have also set new standards in the industry. His expertise in vertical memory devices has positioned him as a key figure in the field.

Collaborations

Throughout his career, Jin-hyun has collaborated with talented individuals such as Keon-Soo Kim and Young-Ho Lee. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Jin-hyun Shin's contributions to the field of memory devices are noteworthy and impactful. His innovative patents and collaborations reflect his commitment to advancing technology. As he continues to work at Samsung Electronics Co., Ltd., his influence on the industry is expected to grow even further.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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