The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Oct. 11, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Joo-Hee Park, Seoul, KR;

Jong-Min Lee, Seongnam-si, KR;

Seon-Kyung Kim, Hwaseong-si, KR;

Kee-Jeong Rho, Hwaseong-si, KR;

Jin-hyun Shin, Suwon-si, KR;

Jong-Hyun Park, Seoul, KR;

Jin-Yeon Won, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01);
Abstract

A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of the substrate, a plurality of gate lines and a conductive line on the substrate. The gate lines are stacked on top of each other. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction. The conductive line cuts the gate lines along the first direction. A width of the conductive line is periodically and repeatedly changed.


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