The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Feb. 08, 2012
Dong-won Kim, Suwon-si, KR;
Jae-hwang Sim, Hwaseong-si, KR;
Keon-soo Kim, Hwaseong-si, KR;
Young-ho Lee, Hwaseong-si, KR;
Dong-Won Kim, Suwon-si, KR;
Jae-Hwang Sim, Hwaseong-si, KR;
Keon-Soo Kim, Hwaseong-si, KR;
Young-Ho Lee, Hwaseong-si, KR;
Abstract
A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer.