The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Oct. 14, 2010
Jae-hwang Sim, Seoul, KR;
Yoon-moon Park, Seoul, KR;
Keon-soo Kim, Hwaseong-si, KR;
Min-sung Song, Hwaseong-si, KR;
Young-ho Lee, Hwaseong-si, KR;
Jae-Hwang Sim, Seoul, KR;
Yoon-Moon Park, Seoul, KR;
Keon-Soo Kim, Hwaseong-si, KR;
Min-Sung Song, Hwaseong-si, KR;
Young-Ho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device facilitates the forming of a conductive pattern of features having different widths. A conductive layer is formed on a substrate, and a mask layer is formed on the conductive layer. First spaced apart patterns are formed on the mask layer and a second pattern including first and second parallel portion is formed beside the first patterns on the mask layer. First auxiliary masks are formed over ends of the first patterns, respectively, and a second auxiliary mask is formed over the second pattern as spanning the first and second portions of the second pattern. The mask layer is then etched to form first mask patterns below the first patterns and a second mask pattern below the second pattern. The first and second patterns and the first and second auxiliary masks are removed. The conductive layer is then etched using the first and second mask patterns as an etch mask.