The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Mar. 07, 2008
Applicants:
Sang-yong Park, Suwon-si, KR;
Sung-hyun Kwon, Seoul, KR;
Jae-hwang Sim, Seoul, KR;
Keon-soo Kim, Gyeonggi-do, KR;
Jae-kwan Park, Gyeonggi-do, KR;
Inventors:
Sang-Yong Park, Suwon-si, KR;
Sung-Hyun Kwon, Seoul, KR;
Jae-Hwang Sim, Seoul, KR;
Keon-Soo Kim, Gyeonggi-do, KR;
Jae-Kwan Park, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device is provided. A plurality of first guide patterns are formed on a substrate. A mask layer is conformally formed on the substrate. Second guide patterns are formed in empty regions on respective sides of the first guide patterns. The mask layer is planarized and the first and second guide patterns are removed. The mask layer is etched by an anisotropic etching process.