The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Mar. 06, 2008
Jun Seo, Gyeonggi-do, KR;
Jong-hyuk Kim, Gyeonggi-do, KR;
Jong-heui Song, Gyeonggi-do, KR;
Yung-jun Kim, Gyeonggi-do, KR;
Min-chul Chae, Gyeonggi-do, KR;
Jun Seo, Gyeonggi-do, KR;
Jong-Hyuk Kim, Gyeonggi-do, KR;
Jong-Heui Song, Gyeonggi-do, KR;
Yung-Jun Kim, Gyeonggi-do, KR;
Min-Chul Chae, Gyeonggi-do, KR;
Abstract
A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.