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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jong-Heui Song

USPTO Granted Patents = 11

Average Co-Inventor Count = 4.2

ph-index = 7

Forward Citations = 88(Granted Patents)


Location History:

  • Kyunggi-do, KR (2000)
  • Suwon, KR (2000 - 2001)
  • Seongnam-si, KR (2010)
  • Gyeonggi-do, KR (2007 - 2013)

Company Filing History:

goldMedal11 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2000-2013

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11 patents (USPTO):Explore Patents
1. 8372198 - Methods of forming dual damascene structures (2013-02-12),
2. 8003487 - Methods of manufacturing a semiconductor device using a layer suspended across a trench (2011-08-23),
3. 7745290 - Methods of fabricating semiconductor device including fin-fet (2010-06-29),
4. 7667221 - Phase change memory devices and methods for fabricating the same (2010-02-23),
5. 7531414 - Method of manufacturing integrated circuit device including recessed channel transistor (2009-05-12),
6. 7358126 - Dual damascene structure and methods of forming the same (2008-04-15),
7. 7326619 - Method of manufacturing integrated circuit device including recessed channel transistor (2008-02-05),
8. 7157770 - MOS transistor with recessed gate and method of fabricating the same (2007-01-02),
9. 6239022 - Method of fabricating a contact in a semiconductor device (2001-05-29),
10. 6124216 - Method of making intermetal dielectric layers having a low dielectric (2000-09-26),
11. 6074519 - Plasma etching apparatus having a sealing member coupling an upper (2000-06-13),

Title: Jong-Heui Song: Innovator in Semiconductor Technology

Introduction

Jong-Heui Song is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on advanced methods for forming dual damascene structures and manufacturing semiconductor devices.

Latest Patents

One of Jong-Heui Song's latest patents involves methods of forming dual damascene structures. This patent discloses a dual damascene structure that includes an insulation member, a single crystal member, and a filling member. The insulation member features an opening with a dual damascene shape, while the filling member is positioned on the side face of the opening. The single crystal member contacts the filling member and fills the opening. This innovative approach aims to reduce void formation between the single crystal member and the insulation member.

Another notable patent by Song details methods of manufacturing a semiconductor device using a layer suspended across a trench. In this process, patterns are formed on a substrate, which are then etched to create trenches of varying depths. A sacrificial layer is utilized to fill the space between the patterns, allowing for the formation of deeper trenches. This method enhances the efficiency and effectiveness of semiconductor device manufacturing.

Career Highlights

Jong-Heui Song is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the company's innovative product offerings.

Collaborations

Throughout his career, Jong-Heui Song has collaborated with talented individuals such as Jun Hyuk Seo and Min-Chul Chae. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Jong-Heui Song's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced semiconductor devices, making a lasting impact on the industry.

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