The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jul. 01, 2004
Applicants:
Jong-chul Park, Gyeonggi-do, KR;
Jong-heui Song, Gyeonggi-do, KR;
Inventors:
Jong-Chul Park, Gyeonggi-do, KR;
Jong-Heui Song, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS transistor with a recessed gate and a method of fabricating the same: The MOS transistor comprises a semiconductor substrate, and a trench isolation layer located in a predetermined region of the semiconductor substrate for defining an active region. The trench isolation layer has a negative slope on at least a lower sidewall thereof. A recessed gate is located in a predetermined region of the active region, and a bottom surface of the recessed gate is placed adjacent the negatively slopped sidewall of the trench isolation layer.