The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Dec. 13, 2007
Jong-chul Park, Gyeonggi-do, KR;
Jun Seo, Gyeonggi-do, KR;
Tae-hyuk Ahn, Gyeonggi-do, KR;
Hyuk-jin Kwon, Gyeonggi-do, KR;
Jong-heui Song, Gyeonggi-do, KR;
Dae-keun Kang, Gyeonggi-do, KR;
Jong-Chul Park, Gyeonggi-do, KR;
Jun Seo, Gyeonggi-do, KR;
Tae-Hyuk Ahn, Gyeonggi-do, KR;
Hyuk-Jin Kwon, Gyeonggi-do, KR;
Jong-Heui Song, Gyeonggi-do, KR;
Dae-Keun Kang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device isolation region adjacent to the channel sub-region, etching the trench device isolation region, which is exposed by the mask pattern, to be recessed to a first depth using the mask pattern as an etch mask, etching the channel sub-region to form a gate trench having a second depth that is deeper than the first depth using the mask pattern as an etch mask, and forming a recess gate that fills the gate trench.