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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Tae-hyuk Ahn

USPTO Granted Patents = 32

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 609(Granted Patents)


Location History:

  • Ansan, KR (1996)
  • Yongin, KR (2002 - 2006)
  • Gyeonggi-do, KR (2005 - 2011)
  • Yongin-si, KR (2008 - 2012)

Company Filing History:

goldMedal32 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1996-2012

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32 patents (USPTO):Explore Patents
1. 8169012 - Semiconductor device and method of fabricating the semiconductor device (2012-05-01),
2. 8017485 - Methods of fabricating a semiconductor device (2011-09-13),
3. 7888725 - Electronic devices including electrode walls with insulating layers thereon (2011-02-15),
4. 7851354 - Semiconductor memory device having local etch stopper and method of manufacturing the same (2010-12-14),
5. 7534726 - Method of forming a recess channel trench pattern, and fabricating a recess channel transistor (2009-05-19),
6. 7531414 - Method of manufacturing integrated circuit device including recessed channel transistor (2009-05-12),
7. 7511328 - Semiconductor device having raised cell landing pad and method of fabricating the same (2009-03-31),
8. 7491601 - Methods of forming electronic devices including electrodes with insulating spacers thereon (2009-02-17),
9. 7491344 - Method for etching an object using a plasma and an object etched by a plasma (2009-02-17),
10. 7462899 - Semiconductor memory device having local etch stopper and method of manufacturing the same (2008-12-09),
11. 7326621 - Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate (2008-02-05),
12. 7326619 - Method of manufacturing integrated circuit device including recessed channel transistor (2008-02-05),
13. 7314795 - Methods of forming electronic devices including electrodes with insulating spacers thereon (2008-01-01),
14. 7312121 - Method of manufacturing a semiconductor memory device (2007-12-25),
15. 7205199 - Method of forming a recess channel trench pattern, and fabricating a recess channel transistor (2007-04-17),

Title: The Innovative Contributions of Tae-hyuk Ahn in Semiconductor Technology

Introduction: Tae-hyuk Ahn, based in Gyeonggi-do, South Korea, is a prolific inventor with a remarkable portfolio of 32 patents. His innovative work primarily focuses on advancements in semiconductor technology, contributing to the enhancement of electronic devices.

Latest Patents: Among his latest patents, Ahn has developed a semiconductor device and a corresponding method for fabricating this device. This technology features high-quality cylindrical capacitors and is designed to optimize performance in electronic applications. The semiconductor device comprises a substrate that delineates distinct cell and peripheral circuit regions, housing multiple capacitors within the cell region. The strategic arrangement of lower electrodes in rows facilitates efficient functionality, while a dielectric layer and upper electrode enhance the device's overall efficacy. Furthermore, the fabrication method involves a meticulous process of layering various dielectric and data storage layers, demonstrating Ahn's commitment to pushing the boundaries in semiconductor innovation.

Career Highlights: Ahn's professional journey is marked by his association with Samsung Electronics Co., Ltd., a global leader in technology. His contributions have not only advanced the company's capabilities but have also significantly impacted the broader semiconductor industry.

Collaborations: Throughout his career, Tae-hyuk Ahn has collaborated with esteemed colleagues, including Jung-woo Seo and Jeong-Sic Jeon. These partnerships highlight the collaborative spirit within the research and development space at Samsung, where teamwork often leads to groundbreaking inventions.

Conclusion: Tae-hyuk Ahn's contributions to semiconductor technology underscore his status as an influential inventor. With numerous patents to his name, he continues to play a vital role in shaping the future of electronics, demonstrating the importance of innovation in today's fast-paced technological landscape.

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