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Tae-hyuk Ahn

This inventor holds 32 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1996-2012.

USPTO Granted Patents = 32

% Patents Active = 46.9

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 616(Granted Patents)

Location History:

Ansan, KR (1996)
Yongin, KR (2002 - 2006)
Gyeonggi-do, KR (2005 - 2011)
Yongin-si, KR (2008 - 2012)

Company Filing History:

32 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 1996-2012

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Areas of Expertise:

Semiconductor Device

Memory Device

Integrated Circuit

Plasma Etching

Recess Channel Transistor

Self-Aligned Contact

Electrode Walls

Insulating Layers

Capacitor Structure

Contact Hole

Fabrication Method

Electronic Devices

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8169012 - Semiconductor device and method of fabricating the semiconductor device (2012-05-01),

2. 8017485 - Methods of fabricating a semiconductor device (2011-09-13),

3. 7888725 - Electronic devices including electrode walls with insulating layers thereon (2011-02-15),

4. 7851354 - Semiconductor memory device having local etch stopper and method of manufacturing the same (2010-12-14),

5. 7534726 - Method of forming a recess channel trench pattern, and fabricating a recess channel transistor (2009-05-19),

6. 7531414 - Method of manufacturing integrated circuit device including recessed channel transistor (2009-05-12),

7. 7511328 - Semiconductor device having raised cell landing pad and method of fabricating the same (2009-03-31),

8. 7491601 - Methods of forming electronic devices including electrodes with insulating spacers thereon (2009-02-17),

9. 7491344 - Method for etching an object using a plasma and an object etched by a plasma (2009-02-17),

10. 7462899 - Semiconductor memory device having local etch stopper and method of manufacturing the same (2008-12-09),

11. 7326621 - Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate (2008-02-05),

12. 7326619 - Method of manufacturing integrated circuit device including recessed channel transistor (2008-02-05),

13. 7314795 - Methods of forming electronic devices including electrodes with insulating spacers thereon (2008-01-01),

14. 7312121 - Method of manufacturing a semiconductor memory device (2007-12-25),

15. 7205199 - Method of forming a recess channel trench pattern, and fabricating a recess channel transistor (2007-04-17),

Title: The Innovative Contributions of Tae-hyuk Ahn in Semiconductor Technology

Introduction: Tae-hyuk Ahn, based in Gyeonggi-do, South Korea, is a prolific inventor with a remarkable portfolio of 32 patents. His innovative work primarily focuses on advancements in semiconductor technology, contributing to the enhancement of electronic devices.

Latest Patents: Among his latest patents, Ahn has developed a semiconductor device and a corresponding method for fabricating this device. This technology features high-quality cylindrical capacitors and is designed to optimize performance in electronic applications. The semiconductor device comprises a substrate that delineates distinct cell and peripheral circuit regions, housing multiple capacitors within the cell region. The strategic arrangement of lower electrodes in rows facilitates efficient functionality, while a dielectric layer and upper electrode enhance the device's overall efficacy. Furthermore, the fabrication method involves a meticulous process of layering various dielectric and data storage layers, demonstrating Ahn's commitment to pushing the boundaries in semiconductor innovation.

Career Highlights: Ahn's professional journey is marked by his association with Samsung Electronics Co., Ltd., a global leader in technology. His contributions have not only advanced the company's capabilities but have also significantly impacted the broader semiconductor industry.

Collaborations: Throughout his career, Tae-hyuk Ahn has collaborated with esteemed colleagues, including Jung-woo Seo and Jeong-Sic Jeon. These partnerships highlight the collaborative spirit within the research and development space at Samsung, where teamwork often leads to groundbreaking inventions.

Conclusion: Tae-hyuk Ahn's contributions to semiconductor technology underscore his status as an influential inventor. With numerous patents to his name, he continues to play a vital role in shaping the future of electronics, demonstrating the importance of innovation in today's fast-paced technological landscape.

Profile summary based on public USPTO records.

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