The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Nov. 04, 2003
Heung-sik Park, Seoul, KR;
Chang-jin Kang, Gyeonggi-do, KR;
Tae-hyuk Ahn, Gyeonggi-do, KR;
Kyeong-koo Chi, Seoul, KR;
Sang-hun Seo, Daejeon, KR;
Heung-Sik Park, Seoul, KR;
Chang-Jin Kang, Gyeonggi-do, KR;
Tae-Hyuk Ahn, Gyeonggi-do, KR;
Kyeong-Koo Chi, Seoul, KR;
Sang-Hun Seo, Daejeon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Disclosed herein is a method for etching a face of an object and more particularly a method for etching a rear face of a silicon substrate. The object having a silicon face is positioned so as to be spaced apart from a plasma-generating member by a predetermined interval distance. The plasma-generating member generates arc plasmas to form a plasma region. A reaction gas is allowed to pass through the plasma region to generate radicals having high energies and high densities. The radicals react with the object to etch the face of the object. The face of the object can be rapidly and uniformly etched.