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For the Inventor, By the Inventor

Suwon-si, South Korea

Chang-Jin Kang

USPTO Granted Patents = 25

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 118(Granted Patents)


Location History:

  • Kyunggi-do, KR (2001 - 2004)
  • Suwon-shi, KR (2006)
  • Gyeonggi-do, KR (2007 - 2013)
  • Suwon-si, KR (2005 - 2015)

Company Filing History:

goldMedal25 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2015

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25 patents (USPTO):
1. 8941165 - Methods of fabricating integrated circuit capacitors having u-shaped lower capacitor electrodes (2015-01-27),
2. 8530954 - Non-volatile memory devices including first and second blocking layer patterns (2013-09-10),
3. 8080886 - Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same (2011-12-20),
4. 7763544 - Method of forming fine pattern of semiconductor device using sige layer as sacrificial layer, and method of forming self-aligned contacts using the same (2010-07-27),
5. 7736970 - Method of fabricating semiconductor device having capacitor (2010-06-15),
6. 7709346 - Semiconductor device with trench gate type transistor and method of manufacturing the same (2010-05-04),
7. 7618899 - Method of patterning a matrix into a substrate via multiple, line-and-space, sacrificial, hard mask layers (2009-11-17),
8. 7566659 - Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same (2009-07-28),
9. 7564094 - Non-volatile memory devices and methods of manufacturing the same (2009-07-21),
10. 7491344 - Method for etching an object using a plasma and an object etched by a plasma (2009-02-17),
11. 7479445 - Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks (2009-01-20),
12. 7402488 - Method of manufacturing a semiconductor memory device (2008-07-22),
13. 7384843 - Method of fabricating flash memory device including control gate extensions (2008-06-10),
14. 7381508 - Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same (2008-06-03),
15. 7338849 - Methods of fabricating flash memory devices and flash memory devices fabricated thereby (2008-03-04),

Title: Innovations by Chang-Jin Kang: Pioneering Semiconductor Technologies

Introduction

Chang-Jin Kang, located in Suwon-si, South Korea, is an accomplished inventor with a remarkable portfolio of 25 patents. His work primarily focuses on advancements in semiconductor technologies, particularly in the fabrication of integrated circuit capacitors and non-volatile memory devices.

Latest Patents

One of Chang-Jin Kang's latest innovations pertains to methods of fabricating integrated circuit capacitors equipped with U-shaped lower capacitor electrodes. This method addresses crucial issues related to the durability and capacitance of capacitors. It includes multiple steps: forming a first insulating layer on a semiconductor substrate, creating a first hole in the insulating layer, and shaping a contact plug. Further advancements involve applying a second insulating layer with a landing pad that connects to the contact plug, followed by an etch stop layer and a third insulating layer, culminating in the formation of a capacitor through a dielectric layer and upper electrode.

Another significant contribution is in the realm of non-volatile memory devices, which feature blocking layer patterns designed to enhance the performance and reliability of these devices. This innovation includes a tunnel insulating layer atop a substrate's channel region, combined with a charge-trapping layer and layered patterns that limit the lateral diffusion of trapped electrons. This technology safeguards the integrity of the stored information and optimizes device functionality.

Career Highlights

Chang-Jin Kang has made a substantial impact during his career, notably through his work with Samsung Electronics Co., Ltd. His contributions to the semiconductor field have led to innovations that bolster both efficiency and effectiveness in electronic devices.

Collaborations

Throughout his career, Kang has collaborated with esteemed colleagues such as Kyeong-Koo Chi and Sung-Il Cho. Their teamwork has fostered an environment where innovative ideas can flourish, leading to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Chang-Jin Kang's dedication to improving semiconductor technologies through his extensive patent portfolio has positioned him as a pivotal figure in the innovation landscape. His continued contributions are expected to play a significant role in shaping the future of electronic devices, driving progress in both functionality and performance.

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