The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Oct. 08, 2008
Yong-kug Bae, Hwaseong-si, KR;
Si-hyeung Lee, Hwaseong-si, KR;
Tae-hyuk Ahn, Yongin-si, KR;
Seok-hwan OH, Suwon-si, KR;
Yong-kug Bae, Hwaseong-si, KR;
Si-hyeung Lee, Hwaseong-si, KR;
Tae-hyuk Ahn, Yongin-si, KR;
Seok-hwan Oh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device and a method of fabricating a semiconductor device provide high quality cylindrical capacitors. The semiconductor device includes a substrate defining a cell region and a peripheral circuit region, a plurality of capacitors in the cell region, and supports for supporting lower electrodes of the capacitors. The lower electrodes are disposed in a plurality of rows each extending in a first direction. A dielectric layer is disposed on the lower electrodes, and an upper electrode is disposed on the dielectric layer. The supports are in the form of stripes extending longitudinally in the first direction and spaced from each other along a second direction. Each of the supports engages the lower electrodes of a respective plurality of adjacent rows of the lower electrodes. Each one of the supports is also disposed at a different level in the device from the support that is adjacent thereto in the second direction.