The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Oct. 20, 2009
Du-hyun Cho, Yongin-si, KR;
Tae-hyuk Ahn, Yongin-si, KR;
Sang-sup Jeong, Suwon-si, KR;
Jin-hyuk Yoo, Hwaseong-si, KR;
Du-Hyun Cho, Yongin-si, KR;
Tae-Hyuk Ahn, Yongin-si, KR;
Sang-Sup Jeong, Suwon-si, KR;
Jin-Hyuk Yoo, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.