Sang-sup Jeong

This inventor holds 28 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-sup Jeong. Retrieved from https://idiyas.com/inventor/sang-sup-jeong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28

% Patents Active = 60.7

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 571(Granted Patents)

Location History:

Suwon, KR (2002 - 2004)
Gyeonggi-do, KR (2007 - 2011)
Suwon-si, KR (2006 - 2014)

Company Filing History:

28 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2002-2014

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Areas of Expertise:

Semiconductor Device

DRAM Fabrication

Self-Aligned Plug

Integrated Circuit

Contact Structure

Plasma Etching

Capacitor Formation

Conductive Layer Structure

Memory Device

Etching Method

Contact Hole

Wafer Shielding

28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8916447 - Method of fabricating semiconductor device (2014-12-23),

2. 8906763 - Method of manufacturing a dynamic random access memory (DRAM) including forming contact pads of adjacent cells by laterally etching a contact opening of a cell therebetween (2014-12-09),

3. 8790976 - Method of forming semiconductor device having self-aligned plug (2014-07-29),

4. 8778757 - Methods of manufacturing a DRAM device (2014-07-15),

5. 8704283 - Semiconductor devices (2014-04-22),

6. 8551888 - Method of forming patterns for semiconductor device (2013-10-08),

7. 8507353 - Method of forming semiconductor device having self-aligned plug (2013-08-13),

8. 8445379 - Method of manufacturing semiconductor device (2013-05-21),

9. 8067285 - Methods of forming a conductive layer structure and methods of manufacturing a recessed channel transistor including the same (2011-11-29),

10. 8053358 - Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation (2011-11-08),

11. 8017485 - Methods of fabricating a semiconductor device (2011-09-13),

12. 8003487 - Methods of manufacturing a semiconductor device using a layer suspended across a trench (2011-08-23),

13. 7875551 - Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation (2011-01-25),

14. 7863677 - Semiconductor device and method of fabricating the same (2011-01-04),

15. 7572711 - Method of manufacturing a semiconductor device (2009-08-11),

Title: The Innovative Journey of Sang-sup Jeong

Introduction: Sang-sup Jeong is a pioneering inventor hailing from Suwon-si, South Korea. With a passion for creating groundbreaking solutions, he has made significant contributions to the field of innovation.

Latest Patents: Sang-sup Jeong's latest patents showcase his commitment to pushing the boundaries of technology and design. His recent inventions have garnered attention for their ingenuity and practicality in various industries.

Career Highlights: Throughout his illustrious career, Sang-sup Jeong has demonstrated a remarkable ability to transform ideas into tangible inventions. His innovative spirit has led to the development of products that have improved the lives of many.

Collaborations: Sang-sup Jeong has collaborated with leading experts in the field to bring his inventions to life. His partnerships with industry professionals have been instrumental in the success of his projects, highlighting his collaborative nature and dedication to innovation.

Conclusion: In conclusion, Sang-sup Jeong stands as a testament to the power of innovation and creativity. His contributions to the world of inventions have left a lasting impact, inspiring others to pursue their own inventive endeavors.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]