The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2013

Filed:

Oct. 12, 2011
Applicants:

Jong-chul Park, Hwaseong-si, KR;

Sang-sup Jeong, Suwon-si, KR;

Bok-yeon Won, Gunpo-si, KR;

Inventors:

Jong-chul Park, Hwaseong-si, KR;

Sang-sup Jeong, Suwon-si, KR;

Bok-yeon Won, Gunpo-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device including a plurality of hole patterns is disclosed. The method includes: forming a plurality of first line patterns and a plurality of first space patterns extending in a first direction; forming a plurality of second line patterns and a plurality of second space patterns extending in a second direction, on the plurality of first line patterns and the plurality of first space patterns; forming a plurality of first hole patterns where the plurality of first space patterns and the plurality of second space patterns cross each other; and forming a plurality of second hole patterns where the plurality of first line patterns and the plurality of second line patterns cross each other.


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