The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Sep. 21, 2011
Yun-seung Kang, Seoul, KR;
Jong-chul Park, Hwaseong-si, KR;
Kwang-yong Yang, Seoul, KR;
Sang-sup Jeong, Suwon-si, KR;
Seok-hyun Lim, Seoul, KR;
Yun-seung Kang, Seoul, KR;
Jong-chul Park, Hwaseong-si, KR;
Kwang-yong Yang, Seoul, KR;
Sang-sup Jeong, Suwon-si, KR;
Seok-hyun Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming patterns for a semiconductor device. The method includes: forming a first hard mask layer on a layer which is to be etched; forming a second hard mask layer on the first hard mask layer, wherein the second hard mask layer includes a first portion and a second portion formed underneath the first portion, wherein the first portion and second portion are composed of the same material; etching the first portion to form first patterns; forming spacers covering sidewalls of the first patterns; etching the second portion using the spacers as etch masks to form second patterns; etching the first hard mask layer and the spacers using the second patterns disposed underneath the spacers as etch masks to form third patterns; and etching the layer to be etched, using the third patterns.