The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jun. 30, 2005
Jong-chul Park, Gyeonggi-do, KR;
Sang-sup Jeong, Gyeonggi-do, KR;
Jong-Chul Park, Gyeonggi-do, KR;
Sang-Sup Jeong, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In an embodiment, a simplified method of manufacturing a semiconductor device reduces a step between cell and peripheral areas. First and second openings are formed through a plurality of thin layers including a support layer on a substrate. A storage electrode and a guide ring are formed on sidewalls and bottoms of the first and second openings, respectively. A support pattern is formed so that the support layer in the cell area is partially etched and the support layer in the peripheral area remains un-etched, thus the support pattern supports and surrounds the storage electrodes adjacent to each other in the cell area and prevents an etching of a layer underlying the support layer in the peripheral area. A dielectric layer and a plate electrode are formed on the storage electrode to complete a semiconductor device with the reduced step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile