The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Jul. 12, 2005
Hoon Lim, Seoul, KR;
Soon-moon Jung, Gyeonggi-do, KR;
Won-seok Cho, Gyeonggi-do, KR;
Jae-hun Jeong, Gyeonggi-do, KR;
Hoon Lim, Seoul, KR;
Soon-Moon Jung, Gyeonggi-do, KR;
Won-Seok Cho, Gyeonggi-do, KR;
Jae-Hun Jeong, Gyeonggi-do, KR;
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a body pattern of a first conductivity type disposed on an insulating layer. A gate electrode is disposed on the body pattern. A drain region of a second conductivity type is disposed on the insulating layer and having a sidewall in contact with a first sidewall of the body pattern. An impurity-doped region of the first conductivity type is disposed on the insulating layer and having a sidewall in contact with a second sidewall of the body pattern. The MOSFET further includes a source region of the second conductivity type disposed on the impurity-doped region and having a sidewall in contact with the second sidewall of the body pattern, and a contact plug extending through the source region to contact the impurity-doped region.