The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Aug. 23, 1999
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Kyonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract
A method of controlling thicknesses of thin film layers in manufacturing semiconductor devices begins with loading monitoring wafers in a thin film forming apparatus. The apparatus has multiple film formation zones, and one of the zones is a reference zone. After forming thin films on the monitoring wafers, thicknesses of the thin films formed on the monitoring wafers are measured. Then, process time and process temperatures are adjusted so that the thicknesses of films are the same as a target film thickness. Finally, thin films are formed on semiconductor wafers using the adjusted process time and temperatures.